Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 959-968

  Jaszek, R ^a   Harris, J J ^b   Roberts, C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007324781     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369251     Document Type: Article

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