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Physical Review B

Volumn 41, Issue 18, 1990, Pages 12607-12618

Structure and evolution of the displacement field in hydrogen-implanted silicon

(12) Cerofolini, G F a Meda, L a Volpones, C a Ottaviani, G b DeFayette, J b Dierckx, R c Donelli, D c Orlandini, M c Anderle, M d Canteri, R d Claeys, C e Vanhellemont, J e

a Functional Materials Laboratory EniChem ^* (Italy)

b UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

c JOINT RESEARCH CENTRE (Italy)

d ITC IRST (Italy)

e IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007320405 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.41.12607 Document Type: Article

Times cited : (31)

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