Γ-X electron transfer in a triple-barrier heterostructure

Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3368-3373

  Kim, Gyungock ^a   Roh, Dong Wan ^a   Paek, Seung Won ^a   Lee, El Hang ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007176534     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365673     Document Type: Article

References (15)

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15. max=0.56 eV, the difference between the valence band maximums of bulk GaAs and AlAs.