Characteristics of Ta4B/sic X-ray mask blanks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2793, Issue , 1996, Pages 219-224

  Ohkubo, Ryo ^a   Shoki, Tsutomu ^a   Mitsui, Hideaki ^a   Annaka, Norimichi ^a   Yamaguchi, Yoh Ichi ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

Amorphous; Cr; Plasma etching; Selectivity; Sic; Ta4B; X ray absorber; X ray lithography; X ray mask blank; X ray mask membrane

Indexed keywords

AMORPHOUS MATERIALS; CATALYST SELECTIVITY; CHLORINE COMPOUNDS; CHROMIUM; DRY ETCHING; FILMS; MASKS; PHOTOMASKS; PLASMA ETCHING; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; STRESS CONCENTRATION; TANTALUM COMPOUNDS; X RAY LITHOGRAPHY;

ETCHING BEHAVIOR; ETCHING SELECTIVITY; GAS SPUTTERING; STRESS CONTROLLABILITY; TA4B; UNIFORM STRESS DISTRIBUTIONS; X RAY MASK; X-RAY ABSORBER;

X RAYS;

EID: 0007122909     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245215     Document Type: Conference Paper

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