메뉴 건너뛰기




Volumn 53, Issue 2, 1996, Pages 896-899

Dissipative and Hall quantum creep thin films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0007088298     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.896     Document Type: Article
Times cited : (17)

References (31)
  • 8
  • 14
    • 12044252575 scopus 로고
    • The value (Formula presented) (0)≈4 nm mentioned in this work was a rough estimate based on preliminary measurements on multilayers
    • R. Griessen, Wen Hai-hu, A. J. J. van Dalen, B. Dam, J. Rector, H. G. Schnack, S. Libbrecht, E. Osquiguil and Y. Bruynseraede, Phys. Rev. Lett. 72, 1910 (1994). The value (Formula presented) (0)≈4 nm mentioned in this work was a rough estimate based on preliminary measurements on multilayers.
    • (1994) Phys. Rev. Lett. , vol.72 , pp. 1910
    • Griessen, R.1    Dam, B.2    Rector, J.3    Schnack, H.4    Libbrecht, S.5    Osquiguil, E.6    Bruynseraede, Y.7
  • 20
    • 0000547382 scopus 로고
    • The difference in behavior between the N=1 and the N⩾2 samples cannot be attributed to structural defects since our contactless relaxation rate measurements, in sharp contrast to transport measurements, are independent of the current paths in the sample, i.e., the current is not forced to flow through weak links. Furthermore we found that the current-voltage curves determined from our (Formula presented) versus (Formula presented) /dt measurements exhibit the same 2D characteristics as the results of Dekker et. al [Phys. Rev. Lett. 69, 2717 (1992)] obtained in ultrathin YBCO films.
    • (1992) Phys. Rev. Lett. , vol.69 , pp. 2717


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.