Transport properties of a resistively-coupled single-electron transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2470-2472

  Wakaya, Fujio ^a   Kitamura, Kazuki ^a   Iwabuchi, Shuichi ^b   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NARA WOMEN'S UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; Coulomb diamond; Gaas algaas heterostructure; Single electron tunneling

Indexed keywords

EID: 0007040783     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2470     Document Type: Article

References (6)

1. See, for example, Single Charge Tunneling, eds H. Grabert and M. H. Devoret (Plenum Press, New York, 1992).
2. K. K. Likharev: IEEE Trans. Magn. 23 (1987) 1142.
3. K. K. Likharev: IBM J. Res. Develop. 32 (1988) 144.
4. P. Delsing, T. Claeson, G. S. Kazacha, L. S. Kuzmin and K. K. Likharev: IEEE Trans. Magn. 27 (1991)2581.
5. N. Yoshikawa, Y. Jinguu, H. Ishibashi and M. Sugahara: Jpn. J. Appl. Phys. 35 (1996) 1140.
6. A. N. Korotkov: preprint.