Fabrication of submicron topology with ion and neutral beam etching

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3048, Issue , 1997, Pages 404-408

  Soshnikov, I P ^a   Lunev, A V ^a   Gaevski, M E ^a   Rotkina, L G ^a   Bert, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007016214     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.275806     Document Type: Conference Paper

References (5)

1. W.M.Moreau Semiconductor lithography, in ser. Microdevices Physics and Fabrication Technologies, Plenum Press, New York and London, 1988
2. K.Sangval, Etching of crystals, North-Holland, 1987
3. V.T.Barchenko, A.Yu.Sokolovskii, Izvestia LETI, 323 (1983), 26 (in russian)
4. I.P.Soshnikov, A.V.Lunev, N.A.Bert et al. Poverhnost' N3, (1997)85 (in russian).
5. O.Wada, J.Phys.D, 17 (1984), 2429