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Volumn 48, Issue 12, 1993, Pages 8751-8756

Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006933993 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.48.8751 Document Type: Article

Times cited : (20)

References (25)

1
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2
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- (1991) Hydrogen in Semiconductors , pp. 139
- Stavola, M.¹ Pearton, S.J.²

4
- 0026139104
- edited by, M. Stutzmann, J. Chevallier, Elsevier, Amsterdam
- (1991) Hydrogen in Semiconductors , pp. 371
- Pajot, B.¹ Clerjaud, B.² Chevallier, J.³

5
- 84926946643
- edited by, D. J. Wolford, J. Bernholc, E. E. Haller, Symposia Proceedings No. 163, Materials Research Society, Pittsburgh
- (1990) Impurities, Defects, and Diffusion in Semiconductors: Bulk and Layered Structures , pp. 465
- Pajot, B.¹

6
- 3743098851
- edited by, M. Stavola, S. J. Pearton, G. Davies, MRS Symposia Proceedings No. 104, Materials Research Society, Pittsburgh
- (1988) Defects in Electronic Materials , pp. 337
- Chevallier, J.¹ Pajot, B.² Jalil, A.³ Mostefaoui, R.⁴ Rahbi, R.⁵ Boissy, M.C.⁶

10
- 84926910961
- edited by, M. Stutzmann, J. Chevallier, Elsevier, Amsterdam
- (1991) Hydrogen in Semiconductors , pp. 295
- DeLeo, G.G.¹

11
- 77951107163
- edited by, S. Pantelides, Gordon and Breach, Philadelphia
- (1992) Deep Centers in Semiconductors, 2nd ed. , pp. 899
- Van de Walle, C.G.¹

17
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- B. Clerjaud, D. Cote, F. Gendron, W.-S. Hahn, M. Krause, C. Porte, and W. Ulrici, in Defects in Semiconductors 16, edited by G. Davies, G. G. DeLeo, and M. Stavola (Trans Tech, Zurich, 1992), p. 563.

21
- 84926908175
- Isothermal annealing experiments similar to those performed for Si:B-H have not been performed because the H-stretching signals are weak and the dichroism is difficult to determine with sufficient accuracy to justify the additional effort a complete set of isothermal annealing data would require. EA is insensitive to the precise value of the prefactor we assume to analyze the simpler isochronal annealing data and changes by only 0.02 eV for an order of magnitude change in νD.

22
- 0542404551
- edited by, G. Davies, Trans. Tech, Zurich
- (1991) Shallow Impurities in Semiconductors , pp. 169
- Briddon, P.¹ Jones, R.²

23
- 0000371596
- C. G. Van de Walle and
- (1989) Phys. Rev. B , vol.39 , pp. 10809
- Denteneer, P.J.H.¹ Pantelides, S.T.²

24
- 0001692302
- C. G. Van de Walle and
- (1989) Phys. Rev. Lett. , vol.62 , pp. 1884
- Denteneer, P.J.H.¹ Pantelides, S.T.²

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