The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma

Semiconductor Science and Technology

Volumn 3, Issue 4, 1988, Pages 356-360

  Nandhra, P S ^a   Newman, R C ^a   Murray, R ^a   Pajot, B ^b   Chevallier, J ^b   Beall, R B ^b   Harris, J J ^b  

^a UNIVERSITY OF READING   (United Kingdom)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006795534     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/3/4/012     Document Type: Article

References (19)

1. Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon
2. Controlled growth of GaAs layers for monolithic hot electron transistors
3. Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency
4. Absorption of Oxygen in Silicon in the Near and the Far Infrared