The nonlinear transport regime of a T-shaped quantum interference transistor

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3599-3601

  Sordan R ^a   Nikolic K ^b  

^a UNIVERSITY OF NOVI SAD   (Serbia)

^b School of Electrical Engineering   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006795476     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116650     Document Type: Article

References (20)

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15. bi is approximately equal to the difference of the metal work function (≈4.6 V for Au) and electron affinity of semiconductor (≈4 V for GaAs).
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19. 4.
20. G.