Optimum growth condition of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H2S gas source

Journal of Applied Physics

Volumn 64, Issue 8, 1988, Pages 3945-3948

  Kaneda, Shigeo ^a   Shimoguchi, Takefumi ^a   Takahashi, Hironobu ^a   Motoyama, Shin Ici ^a   Kano, Fumihisa ^a   Yokoyama, Meiso ^b   Satou, Shuji ^b  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b Nippon Seiki Co Ltd   (Japan)

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EID: 0006670497     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341351     Document Type: Article

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