Heavy ion test results for electronic devices

IEEE Radiation Effects Data Workshop

Volumn , Issue , 1993, Pages 27-32

  Label, Kenneth A ^a   Crabtree, Christina M ^b   Stassinopoulos, E G ^b   Wiseman, Donald ^c   Moran, Amy K ^b  

^a NASA HEADQUARTERS   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c NASA/SERC ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVY IONS; RADIATION HARDENING;

BROOKHAVEN NATIONAL LABORATORY; ELECTRONIC COMPONENT; ELECTRONIC DEVICE; SINGLE EVENT UPSETS;

RADIATION EFFECTS;

EID: 0006625933     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.1993.700564     Document Type: Conference Paper

References (3)

1. Draft JEDEC 13.4 "Test Procedure for the Measurement of Single Event Effects in Semiconductor Devices from Heavy Ion Irradiation", Rev. #1036.
2. Sexton, Fred W., "Measurement of Single Event Phenomena in Devices and ICs", IEEE Nuclear and Space Radiation Effects Short Course, July 1992, pp III-1 - III-55.
3. Kinnison, J. D., Maurer, R. H., et al., 'Summary of Recent VLSI SEU and Latch-up Testing", Workshop Record of 1992 IEEE Radiation Effects Data Workshop, July 1992, pp. 12-15.