Preventing cross-contamination caused by copper diffusion and other sources

MICRO

Volumn 17, Issue 7, 1999, Pages 43-52

  Cacouris, Ted ^a,b  

^a Novellus Portland Technology Center   (United States)

^b Howard Hughes Medical Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006565446     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. AG Milnes, Deep Impurities in Semiconductors (New York: Wiley, 1973).
2. RN Hall and JH Racette, "Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide," Journal of Applied Physics 35, no. 3 (1964): 379-385.
3. EM Conwell, "Properties of Silicon and Germanium, Part II," in Proceedings of the IRE 46, no. 11 (New York: Institute of Reliability Engineering, 1958), 1281-1283.
4. DL Kendall and DB DeVries, "Diffusion in Silicon," in Semiconductor Silicon, eds. RR Haberecht and EL Kern (New York: Electrochemical Society, 1969), 358-371.
5. K Holloway et al., "Tantalum as a Diffusion Barrier between Cooper and Silicon: Failure Mechanism and Effect of Nitrogen Additions," Journal of Applied Physics 71, no. 11 (1992): 5433-5444.