Invited paper radiation-hardened optoelectronic components: Detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 616, Issue , 1986, Pages 254-266

  Wiczer, James J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CHARGED PARTICLES; COMMUNICATION SATELLITES; GALLIUM COMPOUNDS; GAMMA RAYS; HARDENING; HETEROJUNCTIONS; NEUTRON IRRADIATION; OPTICAL COMMUNICATION; OPTICAL INSTRUMENTS; PHOTODIODES; RADIATION HARDENING; X RAYS;

DETECTOR STRUCTURE; DOUBLE HETEROJUNCTIONS; EXPERIMENTAL CONDITIONS; OPERATIONAL CHARACTERISTICS; OPTOELECTRONIC COMPONENTS; RADIATION-HARDENED; RECENT RESEARCHES; SILICON PHOTODIODE;

X RAY DETECTORS;

EID: 0006537695     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.961061     Document Type: Conference Paper

References (23)

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