CVD Cu process integration for sub-0.25 μm technologies

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 163-165

  Zhang, J ^a   Denning, D ^a   Braeckelmann, G ^a   Venkatraman, R ^a   Fiordalice, R ^a   Weitzman, E ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; TANTALUM COMPOUNDS; TIN; TITANIUM NITRIDE;

BACK ENDS; CU PROCESS; HYBRID BARRIER; LIQUID DELIVERY; PROCESS TECHNOLOGIES; REFLOW PROCESS; SHEET RESISTIVITY; STEP COVERAGE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 0006458284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704780     Document Type: Conference Paper

References (2)

1. The National Technology Roadmap f a Semiconductors, Semiconductor Industry Association, San Jose, (1994).
2. A. Jain et al, "CVD TiN and Hybrid Barriers For Back-End Copper Interconnect Technology", Advance Metallization and Interconnect Systems fa ULSI Applications, p26, (1997).