X-ray detectors based on semi-insulating GaAs substrate

Nuclear Inst. and Methods in Physics Research, A

Volumn 322, Issue 3, 1992, Pages 493-498

  Benz, K W ^a   Irsigler, R ^a   Ludwig, J ^a   Rosenzweig, J ^b   Runge, K ^a   Schafer F ^a   Schneider, J ^b   Webel, M ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006369939     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(92)91220-4     Document Type: Article

References (6)

1. Atom-selective imaging of the GaAs(110) surface
2. Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection
3. 8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs