Etching and boron diffusion of high aspect ratio Si trenches for released resonators

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 2, 1997, Pages 267-272

  Weigold, J W ^a   Juan, W H ^a   Pang, S W ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006332228     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589276     Document Type: Article

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