Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interface

Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7999-8004

  Gheorghita, Ligia ^a   Ogryzlo, Elmer ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006332173     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373486     Document Type: Article

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