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Physical Review Letters

Volumn 75, Issue 5, 1995, Pages 914-917

Lattice effects on the magnetoresistance in doped LaMnO3

(5) Hwang, H Y a,b Cheong, S W a Radaelli, P G c Marezio, M a,d Batlogg, B a

a LUCENT TECHNOLOGIES (United States)

b PRINCETON UNIVERSITY (United States)

c INSTITUT LAUE LANGEVIN (France)

d LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006271229 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.75.914 Document Type: Article

Times cited : (2048)

References (20)

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