Optical absorption of Zn1-xMnxGa2Se4 diluted magnetic semiconductors: Variation of the energy gap with composition and temperature

Journal of Applied Physics

Volumn 89, Issue 3, 2001, Pages 1687-1691

  Millan A ^a   Moron M C ^a  

^a UNIVERSITY OF ZARAGOZA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006237373     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1337601     Document Type: Article

References (35)

1. J. K. Furdyna, J. Appl. Phys. 64, R29 (1988).
2. J. K. Furdyna, and J. Kossut, Semiconductors and Semimetals (Academic Press, Boston, 1988), Vol. 25.
3. W. M. Becker in Semiconductors and Semimetals, edited by J. K. Furdyna and J. Kossut (Academic, Boston, 1988), Vol. 25, p. 35.
4. M. Ikeda, K. Itoh, and H. Sato, J. Phys. Soc. Jpn. 25, 455 (1968).
5. R. B. Bylsma, W. M. Becker, J. Kossut, U. Debska, and D. Yoder-Short, Phys. Rev. B 33, 8207 (1986).
6. G. Antonioli, P. P. Lottici, and C. Razzetti, Phys. Status Solidi B 152, 39 (1989).
7. R. Rimet, C. Schlenker, and D. Fruchart, J. Phys. 43, 1759 (1982)
8. M. C. Morón (unpublished).
9. R. L. Carlin, Magnetochemistry (Springer, Berlin, 1986), Chap. 1.
10. A. Hanada, F. Izumi, Y. Nakamura, O. Nittono, Q. Huang, and A. Santoro, Physica B 373, 241 (1998).
11. K. J. Range, and H. J. Huebner, Z. Naturforsch. B 31, 886 (1976).
12. S. Sugano, Y. Tanabe, and H. Kamimura, Multiplets of Transition Metal Ions in Crystals (Academic, New York, 1970).
13. G. M. Niftiev, O. B. Tagiev, E. Z. Zeinalov, and B. D. Aliev, Sov. Phys. Semicond. 25, 424 (1991).
14. D. Langer and S. Ibuki, Phys. Rev. 138, A809 (1965).
15. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971).
16. J. A. Beun, R. Nitsche, and M. Lichtensteiger, Physica (Amsterdam) 27, 448 (1961).
17. W.-T. Kim, C.-S. Chung, Y.-G. Kim, and M.-S. Jin, Phys. Rev. B 38, 2166 (1988).
18. Y.-L. Lee and W.-T. Kim, Phys. Rev. B 50, 10672 (1994).
19. E. Guerrero, M. Quintero, R. Tovar, T. Tinoco, J. González, J. Woolley, and P. Conflant, J. Electron. Mater. 22, 297 (1993).
20. B. G. Tagiev, O. B. Tagiev, and N. N. Musaeva, Semiconductors 29, 728 (1995).
21. J. González, R. Rico, E. Calderón, M. Quintero, and M. Morocoima, Phys. Status Solidi B 211, 45 (1999).
22. A. Twardowski, T. Dietl, and M. Deminianiuk, Solid State Commun. 48, 845 (1983).
23. L. A. Kolodziejski et al., J. Vac. Sci. Technol. B 4, 583 (1986).
24. S. Larach, R. E. Shrader, and C. F. Stocker, Phys. Rev. 108, 587 (1957).
25. W. M. Yim, J. Appl. Phys. 40, 2617 (1969).
26. S. Mamaev, D. N. Nasdelov, and V. V. Galavanov, Sov. Phys. Solid State 3, 2473 (1962).
27. J. C. Wooley, and E. W. Williams, J. Electrochem. Soc. 113, 899 (1966).
28. J. L. Shay and J. H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications (Pergamon. Oxford, 1975).
29. N. N. Niftiev, O. B. Tagiev, and A. G. Rustanov, Sov. Phys. Semicond. 24, 478 (1990).
30. S. Martsinkyavichyus, G. Ambrazyavichyus, R. N. Bekimbetov, and G. A. Medvedkin, Sov. Phys. Semicond. 22, 1216 (1988).
31. Y. P. Varshni, Physica (Utrecht) 34, 149 (1967).
32. A. Fujimori, Jpn. J. Appl. Phys., Part 1 32, 217 (1993).
33. D. W. Langer and H. J. Richter, Phys. Rev. 146, 554 (1966).
34. W. Giriat and J. Stankiewicz, Prog. Cryst. Growth Charact. 10, 87 (1984).
35. J. E. Morales Toro, W. M. Becker, B. I. Wang, U. Debska, and J. W. Richardson, Solid State Commun. 52, 41 (1984).