Numerical simulation and comparison of vertical and lateral sige HBT's for RF/microwave applications

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 620-623

  Hamel, J S ^a   Tang, Y T ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; NUMERICAL MODELS; SILICON ALLOYS; SOLID STATE DEVICES;

POWER GAIN FREQUENCY; RF/MICROWAVE; SIGE HBTS; TWO-DIMENSIONAL NUMERICAL SIMULATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0006185080     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194854     Document Type: Conference Paper

References (4)

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2. R. Dekker, "Silicon process technology innovations for low-power RF applications," ESSDERC, pp. 71-80, September 1998.
3. ATLAS User's Manual, Device Simulation Software, Version 4.3. O. Sil vaco International, Santa Clara, California, USA, 1997.
4. M. Kondo, K. ada, E. Ohue, H. Shimamoto, M. Tanabe, T. Onai, and K. Washio, "Ultra-low-power and highspeed SiGe base bipolar transistors for wireless telecommunication systems," IEEE Transactions on Electron Devices, vol. 45, pp. 1287-1294, June 1998.