Effects of doping on the electronic properties of semiconducting iron disilicide

Materials Science and Engineering B

Volumn 37, Issue 1-3, 1996, Pages 215-218

  Tomm, Y ^a   Ivaneko, L ^a   Irmscher, K ^b   Brehme, St ^a   Henrion, W ^a   Sieber, I ^a   Lange, H ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Doping; Doping effects; Iron disilicide; Semiconductors; Silicides

Indexed keywords

ACTIVATION ENERGY; CHEMICAL REACTIONS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC PROPERTIES; IODINE; ION IMPLANTATION; IRON COMPOUNDS; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

CHEMICAL TRANSPORT REACTION; DOPING EFFECTS; DOPING ELEMENTS; HALL MEASUREMENTS; INEQUIVALENT LATTICE SITES; IRON DISILICIDE; TRANSPORTING AGENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0006166262     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01491-8     Document Type: Article

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