Deep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4770-4772

  Okada, Yoshitaka ^a,c   Harris Jr , James S ^a   Götz, Werner ^b  

^a STANFORD UNIVERSITY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006165606     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363415     Document Type: Article

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