The role of hydrogen in the process of successive laser crystallization of hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 659-663

  Lengsfeld, P ^a   Nickel, N H ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005968757     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00770-x     Document Type: Article

References (11)

1. S.D. Brotherton, D.J. McCulloch, J.B. Clegg, J.P. Gowers, IEEE Trans. Electr. Dev. 40 (1993) 407.
2. N.M. Johnson, D.K. Biegelson, M.D. Moyer, Appl. Phys. Lett. 40 (1982) 882.
3. T.I. Kamins, P.J. Marcoux, IEEE Electr. Dev. Lett. EDL-1 (1980) 159.
4. P. Mei, J.B. Boyce, M. Hack, R. Lujan, R.I. Johnson, G.B. Andersen, D.K. Fork, S.E. Ready, Appl. Phys. Lett. 64 (1994) 1132.
5. I. Kaiser, N.H. Nickel, W. Fuhs, W. Pilz, Phys. Rev. B 58 (1998) R1718.
6. M.O. Thomson, G.J. Galvin, J.W. Mayer, P.S. Peercy, J.M. Poate, D.C. Jacobson, A.G. Cullis, N.G. Chew, Phys. Rev. Lett. 52 (1984) 2360.
7. R. Cerny, P. Prikryl, Phys. Rev. B 57 (1998) 194.
8. C.G. van der Walle, Phys. Rev. B 49 (1994) 4579.
9. W. Beyer, in: N.H. Nickel (Ed.), Hydrogen in Semiconductors II, vol. 61, Academic Press, San Diego, 1999, p. 165.
10. W.B. Jackson, S.B. Zhang, in: H. Fritzsche (Ed.), Transport, Correlation and Structural Defects, vol. C, World Scientific, Singapore, 1990, p. 63.
11. K.J. Chang, D.J. Chadi, Phys. Rev. Lett. 62 (1989) 937.