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Journal of Organometallic Chemistry

Volumn 611, Issue 1-2, 2000, Pages 531-536

Low-temperature growth of polycrystalline Si and Ge films by redox reactions of Si2H6 and GeF4

(2) Hanna, Jun Ichi a Shimizu, Kousaku a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Crystal growth; Disilane; Germanium tetrafluoride; Polysilicon; Thermal CVD

Indexed keywords

EID: 0005943690 PISSN: 0022328X EISSN: None Source Type: Journal
DOI: 10.1016/S0022-328X(00)00400-9 Document Type: Article

Times cited : (21)

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