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Volumn 59, Issue 2-3, 2000, Pages 727-734
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Ultrathin Al2O3 and AlN films deposited by reactive sputter using advanced electron cyclotron resonance plasma source
a a a a a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0005911924
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/s0042-207x(00)00340-7 Document Type: Article |
Times cited : (9)
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References (11)
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