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Volumn 33, Issue 10, 1986, Pages 1511-1517

Time and Frequency Response of the Conventional Avalanche Photodiode

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EID: 0005900901     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22701     Document Type: Article
Times cited : (33)

References (45)
  • 2
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • R. J. McIntyre, “Multiplication noise in uniform avalanche diodes.” IEEE Trans. Electron Devices, vol. ED-13, pp. 164–168, 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 3
    • 84990479554 scopus 로고
    • New results on avalanche multiplication statistics with application to optical detection
    • S. D. Personick, “New results on avalanche multiplication statistics with application to optical detection,” Bell Syst. Tech. J., vol. 50, pp. 167–189, 1971.
    • (1971) Bell Syst. Tech. J. , vol.50 , pp. 167-189
    • Personick, S.D.1
  • 4
    • 0015200288 scopus 로고
    • Statistics of a general class of avalanche detectors with applications to optical communication
    • —, “Statistics of a general class of avalanche detectors with applications to optical communication,” Bell Syst. Tech. J., vol. 50, pp. 3075–3095, 1971.
    • (1971) Bell Syst. Tech. J. , vol.50 , pp. 3075-3095
    • Personick, S.D.1
  • 5
    • 84938015195 scopus 로고
    • The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
    • R. J. McIntyre, “The distribution of gains in uniformly multiplying avalanche photodiodes: Theory,” IEEE Trans. Electron Devices, vol. ED-19, pp. 703–713, 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 703-713
    • McIntyre, R.J.1
  • 6
    • 0015360553 scopus 로고
    • The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
    • J. Conradi, “The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental,” IEEE Trans. Electron Devices, vol. ED-19, pp. 713–718, 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 713-718
    • Conradi, J.1
  • 7
    • 0016069547 scopus 로고
    • Properties of avalanche photodiodes
    • P. P. Webb, R. J. McIntyre, and J. Conradi, “Properties of avalanche photodiodes,” RCA Rev., vol. 35, pp. 234–278, 1974.
    • (1974) RCA Rev. , vol.35 , pp. 234-278
    • Webb, P.P.1    McIntyre, R.J.2    Conradi, J.3
  • 8
    • 0010563431 scopus 로고
    • Recent developments in silicon avalanche photodiodes
    • P. P. Webb and R. J. McIntyre, “Recent developments in silicon avalanche photodiodes,” RCA Eng., vol. 27, pp. 96–102, 1982.
    • (1982) RCA Eng. , vol.27 , pp. 96-102
    • Webb, P.P.1    McIntyre, R.J.2
  • 9
    • 0020113614 scopus 로고
    • Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio
    • F. Capasso, W. T. Tsang, and G. F. Williams, “Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio,” IEEE Trans. Electron Devices, vol. ED-30, pp. 381-390, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 381-390
    • Capasso, F.1    Tsang, W.T.2    Williams, G.F.3
  • 10
    • 0021497113 scopus 로고
    • Measurements of the statistics of excess noise in separate absorption, grading and multiplication (SAGM) avalanche photodiodes
    • B. L. Kasper, J. C. Campbell, and A. G. Dentai, “Measurements of the statistics of excess noise in separate absorption, grading and multiplication (SAGM) avalanche photodiodes,” Electron. Lett., vol. 20, pp. 796–798, 1984.
    • (1984) Electron. Lett. , vol.20 , pp. 796-798
    • Kasper, B.L.1    Campbell, J.C.2    Dentai, A.G.3
  • 11
    • 0000215418 scopus 로고
    • Noise properties and time response of the staircase avalanche photodiode
    • also in J. Lightwave Technol., vol. LT-3, pp. 1223–1231, 1985.
    • K. Matsuo, M. C. Teich, and B. E. A. Saleh, “Noise properties and time response of the staircase avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2615–2623, 1985; also in J. Lightwave Technol., vol. LT-3, pp. 1223–1231, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2615-2623
    • Matsuo, K.1    Teich, M.C.2    Saleh, B.E.A.3
  • 12
    • 84941429778 scopus 로고
    • Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes
    • M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes,” IEEE J. Quantum Electron., vol. QE-22, pp. 1184–1193, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1184-1193
    • Teich, M.C.1    Matsuo, K.2    Saleh, B.E.A.3
  • 13
    • 0000876407 scopus 로고
    • Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes
    • this issue
    • M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes,” IEEE Trans. Electron Devices, this issue, pp. 1475–1488, 1986.
    • (1986) IEEE Trans. Electron Devices , pp. 1475-1488
    • Teich, M.C.1    Matsuo, K.2    Saleh, B.E.A.3
  • 14
    • 84944485870 scopus 로고
    • A proposed high frequency negative resistance diode
    • W. T. Read, “A proposed high frequency negative resistance diode,” Bell Syst. Tech. J., vol. 37, pp. 401–446, 1958.
    • (1958) Bell Syst. Tech. J. , vol.37 , pp. 401-446
    • Read, W.T.1
  • 15
    • 0017022706 scopus 로고
    • Avalanche buildup time of silicon reach-through photodiodes
    • T. Kaneda, H. Takanashi, H. Matsumoto, and T. Yamaoka, “Avalanche buildup time of silicon reach-through photodiodes,” J. Appl. Phys., vol. 47, pp. 4960–4963, 1976.
    • (1976) J. Appl. Phys. , vol.47 , pp. 4960-4963
    • Kaneda, T.1    Takanashi, H.2    Matsumoto, H.3    Yamaoka, T.4
  • 16
    • 84918059846 scopus 로고
    • An optimized avalanche photodiode
    • H. W. Ruegg, “An optimized avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-14, pp. 239–251, 1967.
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 239-251
    • Ruegg, H.W.1
  • 17
    • 0020815923 scopus 로고
    • High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions
    • J. C. Campbell, A. G. Dentai, W. S. Holden, and B. L. Kasper, “High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions,” Electron. Lett., vol. 19, pp. 818–820, 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 818-820
    • Campbell, J.C.1    Dentai, A.G.2    Holden, W.S.3    Kasper, B.L.4
  • 18
    • 33646674470 scopus 로고
    • Poisson branching point processes
    • K. Matsuo, M. C. Teich, and B. E. A. Saleh, “Poisson branching point processes,” J. Math. Phys., vol. 25, pp. 2174–2185, 1984.
    • (1984) J. Math. Phys. , vol.25 , pp. 2174-2185
    • Matsuo, K.1    Teich, M.C.2    Saleh, B.E.A.3
  • 19
    • 0001469502 scopus 로고
    • The frequency response of avalanching photodiodes
    • R. B. Emmons and G. Lucovsky, “The frequency response of avalanching photodiodes,” IEEE Trans. Electron Devices, vol. ED-13, pp. 297-305, 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 297-305
    • Emmons, R.B.1    Lucovsky, G.2
  • 20
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • R. B. Emmons, “Avalanche-photodiode frequency response,” J. Appl. Phys., vol. 38, pp. 3705–3714, 1967.
    • (1967) J. Appl. Phys. , vol.38 , pp. 3705-3714
    • Emmons, R.B.1
  • 21
    • 0004481067 scopus 로고
    • Frequency response of PIN avalanching photodiodes
    • J. J. Chang, “Frequency response of PIN avalanching photodiodes,” IEEE Trans. Electron Devices, vol. ED-14, pp. 139–145, 1967.
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 139-145
    • Chang, J.J.1
  • 22
    • 36849111214 scopus 로고
    • Time dependence of avalanche processes in silicon
    • C. A. Lee, R. L. Batdorf, W. Wiegmann, and G. Kaminsky, “Time dependence of avalanche processes in silicon,” J. Appl. Phys., vol. 38, pp. 2787–2796, 1967.
    • (1967) J. Appl. Phys. , vol.38 , pp. 2787-2796
    • Lee, C.A.1    Batdorf, R.L.2    Wiegmann, W.3    Kaminsky, G.4
  • 23
    • 0015559682 scopus 로고
    • Effects of time dependence of multiplication process on avalanche noise
    • I. Naqvi, “Effects of time dependence of multiplication process on avalanche noise,” Solid-State Electron., vol. 16, pp. 19–28, 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 19-28
    • Naqvi, I.1
  • 24
    • 0022046387 scopus 로고
    • Frequency responses of graded-bandgap low-noise avalanche photodiodes
    • S. Rakshit and R. Sarin, “Frequency responses of graded-bandgap low-noise avalanche photodiodes,” IEEE Trans. Electron Devices, vol. ED-32, pp. 749–752, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 749-752
    • Rakshit, S.1    Sarin, R.2
  • 25
    • 0020139986 scopus 로고
    • Time-domain simulation analysis of avalanche photodetectors
    • S. M. Riad and A. A. R. Riad, “Time-domain simulation analysis of avalanche photodetectors,” IEEE Trans. Electron Devices, vol. ED-29, pp. 994–998, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 994-998
    • Riad, S.M.1    Riad, A.A.R.2
  • 26
    • 0016521412 scopus 로고
    • On the time dependency of the avalanche process in semiconductors
    • A. A. Walma and R. Hackam, “On the time dependency of the avalanche process in semiconductors,” Solid-State Electron., vol. 18, pp. 511–517, 1975.
    • (1975) Solid-State Electron. , vol.18 , pp. 511-517
    • Walma, A.A.1    Hackam, R.2
  • 27
    • 0342395344 scopus 로고
    • Simulation studies in both the frequency and time domains of InGaAsP-InP avalanche photodetec-tors
    • A. A. R. Riad and R. E. Hayes, “Simulation studies in both the frequency and time domains of InGaAsP-InP avalanche photodetec-tors,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1000–1003, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1000-1003
    • Riad, A.A.R.1    Hayes, R.E.2
  • 28
    • 0020103265 scopus 로고
    • The graded bandgap multilayer avalanche photodiode: A new low-noise detector
    • G. F. Williams, F. Capasso, and W. T. Tsang, “The graded bandgap multilayer avalanche photodiode: A new low-noise detector,” IEEE Electron Device Lett., vol. EDL-3, pp. 71–73, 1982.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 71-73
    • Williams, G.F.1    Capasso, F.2    Tsang, W.T.3
  • 29
    • 0022150891 scopus 로고
    • Theory of electron and hole impact ionization in quantum well and staircase superlattice avalanche photodiode structures
    • K. Brennan, “Theory of electron and hole impact ionization in quantum well and staircase superlattice avalanche photodiode structures,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2197–2205, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2197-2205
    • Brennan, K.1
  • 30
    • 0021517089 scopus 로고
    • III-V compound semiconductor devices: Optical detectors
    • G. E. Stillman, V. M. Robbins, and N. Tabatabaie, “III-V compound semiconductor devices: Optical detectors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1643–1655, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1643-1655
    • Stillman, G.E.1    Robbins, V.M.2    Tabatabaie, N.3
  • 31
    • 85012611281 scopus 로고
    • Physics of avalanche photodiodes
    • R. K. Willardson and A. C. Beer, Series Eds., part D, Lightwave Communications Technology, W. T. Tsang, Ed. New York: Academic
    • F. Capasso, “Physics of avalanche photodiodes,” in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Series Eds., vol. 22, part D, Lightwave Communications Technology, W. T. Tsang, Ed. New York: Academic, 1985, pp. 1–172.
    • (1985) Semiconductors and Semimetals , vol.22 , pp. 1-172
    • Capasso, F.1
  • 32
    • 0019317240 scopus 로고
    • Impact ionization in multilayered heterojunction structures
    • R. Chin, N. Holonyak, G. E. Stillman, J. Y. Tang, and K. Hess, “Impact ionization in multilayered heterojunction structures,” Electron. Lett., vol. 16, pp. 467–469, 1980.
    • (1980) Electron. Lett. , vol.16 , pp. 467-469
    • Chin, R.1    Holonyak, N.2    Stillman, G.E.3    Tang, J.Y.4    Hess, K.5
  • 33
    • 0002528786 scopus 로고
    • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
    • F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, “Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio,” Appl. Phys. Lett., vol. 40, pp. 38–40, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 38-40
    • Capasso, F.1    Tsang, W.T.2    Hutchinson, A.L.3    Williams, G.F.4
  • 36
    • 0020116014 scopus 로고
    • Single-carrier-type dominated impact ionization in multilayer structures
    • H. Blauvelt, S. Margalit, and A. Yariv, “Single-carrier-type dominated impact ionization in multilayer structures,” Electron. Lett., vol. 18, pp. 375–376, 1982.
    • (1982) Electron. Lett. , vol.18 , pp. 375-376
    • Blauvelt, H.1    Margalit, S.2    Yariv, A.3
  • 37
    • 84948589222 scopus 로고    scopus 로고
    • Theory of the GalnAs/AlInAs doped-quantum-well APD: A new low-noise solid-state photodetector for lightwave communications systems
    • to be published.
    • K. Brennan, “Theory of the GalnAs/AlInAs doped-quantum-well APD: A new low-noise solid-state photodetector for lightwave communications systems,” to be published.
    • Brennan, K.1
  • 38
    • 0020115263 scopus 로고
    • A new infrared detector using electron emission from multiple quantum wells
    • J. S. Smith, L. C. Chiu, S. Margalit, A. Yariv, and A. Y. Cho, “A new infrared detector using electron emission from multiple quantum wells,” J. Vac. Sci. Technol. B, vol. 1, pp. 376–378, 1983.
    • (1983) J. Vac. Sci. Technol. B , vol.1 , pp. 376-378
    • Smith, J.S.1    Chiu, L.C.2    Margalit, S.3    Yariv, A.4    Cho, A.Y.5
  • 39
    • 0000831633 scopus 로고
    • Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures
    • S. L. Chuang and K. Hess, “Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures,” J. Appl. Phys., vol. 59, pp. 2885–2894, 1986.
    • (1986) J. Appl. Phys. , vol.59 , pp. 2885-2894
    • Chuang, S.L.1    Hess, K.2
  • 40
    • 21544470520 scopus 로고
    • New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity
    • F. Capasso, J. Allam, A. Y. Cho, K. Mohammed, R. J. Malik, A. L. Hutchinson, and D. Sivco, “New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity,” Appl. Phys. Lett., vol. 48, pp. 1294–1296, 1986.
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1294-1296
    • Capasso, F.1    Allam, J.2    Cho, A.Y.3    Mohammed, K.4    Malik, R.J.5    Hutchinson, A.L.6    Sivco, D.7
  • 42
    • 0020182824 scopus 로고
    • The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector
    • F. Capasso, “The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1388–1395, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1388-1395
    • Capasso, F.1
  • 43
    • 0022152070 scopus 로고
    • Theory of the channeling avalanche photodiode
    • K. Brennan, “Theory of the channeling avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2467–2478, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2467-2478
    • Brennan, K.1
  • 44
    • 0003805907 scopus 로고
    • Stochastic Processes
    • San Francisco: Holden-Day
    • E. Parzen, Stochastic Processes. San Francisco: Holden-Day, 1962.
    • (1962)
    • Parzen, E.1
  • 45
    • 0019076176 scopus 로고
    • Temporal and frequency response of avalanche photodiodes from noise measurements
    • T. Andersson, A. R. Johnston, and H. Eklund, “Temporal and frequency response of avalanche photodiodes from noise measurements,” Appl. Opt., vol. 19, pp. 3496–3499, 1980.
    • (1980) Appl. Opt. , vol.19 , pp. 3496-3499
    • Andersson, T.1    Johnston, A.R.2    Eklund, H.3


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