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Volumn 75, Issue 13, 1995, Pages 2542-2545

Vertically self-organized InAs quantum box islands on GaAs(100)

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Indexed keywords


EID: 0005834097     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.75.2542     Document Type: Article
Times cited : (1280)

References (20)
  • 12
    • 0018479991 scopus 로고
    • Acta Metall.
    • (1979) , vol.27 , pp. 1075
    • Perovic, V.1
  • 19
    • 0003531591 scopus 로고
    • John Wiley and Sons, NY, 2nd Ed. An angular dependence arising from the projection of the strain field onto the GaAs spacer surface gives an additional factor (1-3x2/r2). Ignoring this angular term is estimated to cause a less than 10% error in the estimation of z0.
    • (1992) Theory of Dislocations
    • Hirth, J.P.1    Lothe, J.2
  • 20
    • 84927468745 scopus 로고    scopus 로고
    • Since r0/z<0.5, terms of order higher than (r0/z)3 have been dropped in obtaining μ from Eq. 4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.