Characterization of InxGa1-xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

Journal of Applied Physics

Volumn 81, Issue 6, 1997, Pages 2601-2606

  Rose, D ^a   Pietsch, U ^a   Zeimer, U ^b  

^a UNIVERSITY OF POTSDAM   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005730468     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363924     Document Type: Article

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