Chapter 2 Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures

Semiconductors and Semimetals

Volumn 55, Issue C, 1998, Pages 45-116

  Klipstein, P C ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE STUDY; SEMICONDUCTOR HETEROSTRUCTURES; VERTICAL TRANSPORTS;

EID: 0005725854     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)60080-0     Document Type: Chapter

References (136)

1. Esaki L., and Tsu R. IBM J. Res. Dev. 14 (1970) 61
2. Feist J., Capasso F., Sitori C., Sivco D.L., Baillargeon J.N., Hutchinson A.L., Chu S., and Cho A.Y. Appl. Phys. Lett. 68 (1996) 3680
3. Ricco B., and Azbel M.Ya. Phys. Rev. B 29 (1984) 1970
4. Goldman V.J., Tsui D.C., and Cunningham J.E. Phys. Rev. B 36 (1987) 7635
5. Zhang C., Lerch M.L.F., Martin A.D., Simmonds P.E., and Eaves L. Phys. Rev. Lett. 72 (1994) 3397
6. Luryi S. Appl. Phys. Lett. 47 (1985) 490
7. Wu J.S., Lee C.P., Chang C.Y., Chang K.H., Liu D.G., and Liou D.C. J. Appl. Phys. 69 (1991) 1122
8. Ben Daniel D.J., and Duke C.B. Phys. Rev. 152 (1966) 683
9. Bastard G. Wave Mechanics Applied to Semiconductor Heterostructures. (1988), Halstead Press, New York
10. Schiff L.I. Quantum Mechanics, 3rd ed. (1955), McGraw-Hill, Singapore 104-105
11. Harada N., and Kuroda S. Jap. J. Appl. Phys. 25 (1986) L871
12. Bardeen J. Phys. Rev. Lett. 6 (1961) 57
13. Payne M.C. J. Phys. C 19 (1987) 1145
14. Smoliner J. Semicond. Sci. Technol. 11 (1996) 1
15. J.M. Smith 1997). D. Phil. thesis, University of Oxford
16. Weil T., and Vinter B. Appl. Phys. Lett. 50 (1987) 1281
17. Austing D.G., Klipstein P.C., Higgs A.W., Smith G.W., Roberts J.S., and Hill G. In: Chang L.L., Mendez E.E., and Tejedor C. (Eds). Resonant Tunnelling in Semiconductors (1992), Plenum, New York 157
18. Cury L.A., Dmowski L., Celeste A., Portal J.C., Sivco D.L., Cho A.Y., Eaves L., Davies M., Health M., and Middleton J.R. Semicond. Sci. Technol. 6 (1991) 449
19. Goldman V.J., Tsui D.C., and Cunningham J.E. Phys. Rev. Lett. 58 (1987) 1256
20. Fang F.F., and Howard W.E. Phys. Rev. Lett. 16 (1966) 797
21. Ando T., Fowler A.B., and Stern F. Rev. Mod. Phys. 54 (1982) 437
22. W. Chaudhry, and Klipstein, P. C. To be published
23. Takada Y., and Uemura Y. J. Phys. Soc. Jpn. 43 (1977) 139
24. U.M. Khan-Cheema 1996). D. Phil. thesis, Oxford University
25. Miura N., Yokoi H., Kono J., and Sasaki S. Solid State Commun. 79 (1991) 1039
26. Lu Y.T., and Sham L.J. Phys. Rev. B 40 (1989) 5567
27. Wentzcovich R.M., Cardona M., Cohen M.L., and Christenson N.E. Solid State Commun. 67 (1988) 927
28. W.R. Tribe P.C. Klipstein G.W. Smith 1994). In 22nd Int. Conf on the Physics of Semiconductors, Lockwood, D. J.), pp. 935-938, World Press
29. Tribe W.R., Klipstein P.C., Smith G.W., and Grey R. Phys. Rev. B 54 (1996) 8721
30. Dawson P., Moore K.J., Foxon C.T., t'Hooft G.W., and van Hal R.P.M. J. Appl. Phys. 65 (1989) 3606
31. Pulsford N.J., Nicholas R.J., Dawson P., Moore K.J., Duggan G., and Foxon C.T.B. Phys. Rev. Lett. 63 (1989) 2284
32. Xia J.-B. Phys. Rev. B 41 (1990) 3117
33. Liu H.C. Appl. Phys. Lett. 51 (1987) 1019
34. Fu Y., Willander M., Ivchenko E.L., and Kiselev A.A. Phys. Rev. B 47 (1993) 13498
35. P.C. Klipstein, To be published
36. Ando T., and Akera H. Phys. Rev. B 40 (1989) 11619
37. Marsh A.C. Semicond. Sci. Technol. 1 (1986) 320
38. Altarelli M. Phys. Rev. B 28 (1983) 842
39. Lyapin S.G., Klipstein P.C., Mason N.J., and Walker P.J. Phys. Rev. Lett. 74 (1995) 3285
40. Meynadier M.H., Nahory R.E., Worlock J.M., Tamargo M.C., Demiguel J.I., and Sturge M.D. Phys. Rev. Lett. 60 (1988) 1338
41. Maaref M., Charfi F.F., Scalbert D., Benoit a la Guillaume C., and Planel R. Solid State Commun. 81 (1992) 35
42. Fu L.P., Bacalzo F.T., Gilliland G.D., Chen R., Bajaj K.K., Klem J., and Wolford D.J. Phys. Rev. B 52 (1995) 2682
43. Teissier R., Finley J.J., Skolnick M.S., Cockburn J.W., Pelouard J.-L., Grey R., Hill G., Pate M.A., and Planel R. Phys. Rev. B 54 (1996) R8239
44. van Kesteren H.W., Cosman E.C., Dawson P., Moore K.J., and Foxon C.T. Phys. Rev. B 39 (1989) 13426
45. Dawson P., Foxon C.T., and van Kesteren H.W. Semicond. Sci. Technol. 5 (1990) 54
46. Matutinovic-Kristelij Z., Liu C.W., Xiao X., and Sturm J.C. Appl. Phys. Letr. 62 (1993) 603
47. Tribe W.R., Klipstein P.C., Smith G.W., Grey R., and Roberts J.S. J. Phys. Chem. Solids 56 (1995) 429
48. Cong L., Albrecht J.D., Nathan M.I., and Ruden P.P. J. Appl. Phys. 79 (1996) 7770
49. Eremets M.I. High Pressure Experimental Methods. (1996), Oxford University Press
50. Chakravorty S., Sadiq S., and West D.R.F. Materials Sci. Tech. 4 (1988) 562
51. Pitt G.D. J. Phys. E: Sci. Instrum. 1 (1968) 915
52. W. Paul 1996). In Proc. Joint XV AIRAPT & XXXIII EHPRG Int. Conf. (Warsaw 1995) Trzeciakowski, W.), pp. 585-590, World Scientific, Singapore
53. Pitt G.D., and Lees J. Solid State Commun. 8 (1970) 491
54. Esaki L. Phys. Rev. 109 (1958) 603
55. Gunn J.B. IBM J. Res. Develop. 8 (1964) 141
56. Fritzsche H. In: Burstein E., and Lundqvist S. (Eds). Tunneling Phenomena in Solids (1969), Plenum, New York 167-180
57. Hutson A.R., Jayaraman A., Chynoweth A.G., Cornell A.S., and Feldman W.L. Phys. Rev. Lett. 14 (1965) 639
58. Hilsum C. Proc. I. R. E. 50 (1962) 185
59. Allen J.W., Shyam M., Chen Y.S., and Pearson G.L. Appl. Phys. Lett. 7 (1965) 78
60. Pickering C., Adams A.R., Pitt G.D., and Vyas M.K.R. J. Phys. C 8 (1975) 129
61. R. Pritchard 1989). Ph.D. thesis, University of London (Imperial College)
62. Mendbez E.E., Calleja E., and Wang W.I. Appl. Phys. Lett. 53 (1988) 977
63. Maude D.K., Foster T.J., Eaves L., Davies M., Henini M., Hughes O.H., and Heath M. Semicond. Sci. Technol 6 (1991) 422
64. Eaves L., Foster T.J., Leadbeater M.L., and Maude D.K. In: Chang L.L. (Ed). Resonant Tunneling in Semiconductors (1991), Plenum, New York 229-242
65. Mendez E.E., and Chang L.L. Surf. Sci. 229 (1990) 173
66. Austing D.G., Klipstein P.C., and Roberts J.S. Solid State Commun. 75 (1990) 697
67. Lu S.S., Meng C.C., Williamson F., and Nathan M.I. J. Appl. Phys. 69 (1991) 8241
68. Otthaman Z., Peck A.J., Bending S.J., Saunders G.A., Rossmanith M., Ploog K., and von Klitzing K. J. Appl. Phys. 70 (1991) 1548
69. Austing D.G., Klipstein P.C., Higgs A.W., Hutchinson H.J., Smith G.W., Roberts J.S., and Hill G. Phys. Rev. B 47 (1993) 1419
70. Austing D.G., Klipstein P.C., Roberts J.S., Button C.B., and Hill G. Phys. Rev. B 48 (1993) 11905
71. Austing D.G., Klipstein P.C., Roberts J.S., Mistry C.P., and Hill G. J. Appl. Phys. 74 (1993) 7340
72. Carnahan R.E., Martin K.P., Higgins R.J., Park B.G., Wolak E., Lear K.L., and Harris J.S. Semicond. Sci. Technol. 9 (1994) 500
73. Jimenez J.L., Mendez E.E., Li X., and Wang W.I. Phys. Rev. B 51 (1995) 7938
74. Jimenez J.L., Mendez E.E., Li X., and Wang W.I. Phys. Rev. B 52 (1995) R5495
75. Adachi S. J. Appl. Phys. 58 (1985) R1
76. Mizuta H., and Tanoue T. The Physics and Applications of Resonant Tunneling Diodes (1996), Cambridge University Press
77. Skolnick M.S., Smith G.W., Spain I.L., Whitehouse C.R., Herbert D.C., Whittaker D.M., and Reed L.J. Phys. Rev. B 39 (1989) 11191
78. Wolford D.J., Kuech T.F., Bradley J.A., Gell M.A., Ninno D., and Jaros M. J. Vac. Sci. Technol. B4 (1986) 1043
79. Pritchard R., Austing D.G., Klipstein P.C., Roberts J.S., Higgs A.W., and Smith G.W. J. Appl. Phys. 6 (1990) 205
80. Mendez E.E., Calleja E., and Wang W.I. Phys. Rev. B 34 (1986) 6026
81. Carbonneau Y., Beerens J., Cury L.A., Liu H.C., and Buchanan M. Appl. Phys. Lett. 62 (1993) 1955
82. Beresford R., Luo L.F., Wang W.I., and Mendez E.E. Appl. Phys. Lett. 55 (1989) 1555
83. Ohno H., Mendez E.E., and Wang W.I. Appl. Phys. Lett. 56 (1990) 1793
84. Otthaman Z., Geim A.K., Bending S.J., Syme R.T., and Smith R.S. Semicond. Sci. Technol. 8 (1993) 1483
85. Finley J.J., Teissier R.J., Skolnick M.S., Cockburn J.W., Grey R., Hill G., and Pate M.A. Phys. Rev B 54 (1996) R5251
86. Solomon P.M., Wright S.L., and Lanza C. Superlatt. Microstruct. 2 (1986) 521
87. Austing D.G., Klipstein P.C., Roberts J.S., and Hill G. Semicond. Sci. Technol. 10 (1995) 616
88. Rossmanith M., Syassen K., Bockenhoff E., Ploog K., and von Klitzing K. Phys. Rev. B 44 (1991) 3168
89. Diniz R., Smoliner J., Gornik E., Meiners U., Brugger H., Wisniewski P., and Suski T. Semicond. Sci. Technol. 8 (1993) 1352
90. Taylor D.C., Guimaraes P.S.S., Snell B.R., Eaves L., Sheard F.W., Toombs G.A., Portal J.C., Dmowski L., Singer K.E., Hill G., and Pate M.A. Surf Sci. 174 (1986) 472
91. Maude D.K., Portal J.C., Dmowski L., Foster L., Eaves L., Nathan M., Heiblum M., Harris J.J., and Beall R.B. Phys. Rev. Lett. 59 (1987) 815
92. Cury L.A., Pritchard R., Celeste A., Portal J.C., Eaves L., Davies M., Health M., Middleton J.R., Dmowski L., Sivco D.L., and Cho A.Y. Proc. Int. Con f. Phys. Semicond. 20 (1990) 1333
93. Suski T., Gschlossl C., Demmerle W., Smoliner J., Gornik E., Bohm G., and Weimann G. Appl. Phys. Lett. 59 (1991) 2436-2438
94. Sollner T.C.L.G. Phys. Rev. Lett. 59 (1987) 1622
95. Feldman J., Nunnenkamp J., Peter G., Gobel E., Kuhl J., Ploog K., Dawson P., and Foxon C.T. Phys. Rev. B 42 (1990) 5809
96. Smith J.M., Klipstein P.C., Grey R., and Hill G. Phys. Rev. B. 57 (1998) 1740
97. Foxon C.T., and Joyce B.A. In: Stradling R.A., and Klipstein P.C. (Eds). Growth and Characterisation of Semiconductors (1990), Adam Hilger, Bristol and New York 35-64
98. Smith J.M., Austing D.G., Grey R., Roberts J.S., Hill G., and Klipstein P.C. J. Phys. Chem. Solids 56 (1995) 475
99. Smoliner J., Demmerle W., Berthold G., Gornik E., and Weimann G. Phys. Rev. Let. 63 (1989) 2116
100. Eisenstein J.P., Pfeiffer L.N., and West K.W. Appl. Phys. Lett. 58 (1991) 1497
101. Eisenstein J.P., Pfeiffer L.N., and West K.W. Phys. Rev. Lett. 74 (1995) 1419
102. Turner N., Nicholls J.T., Linfield E.H., Brown K.M., Jones G.A.C., and Ritchie D.A. Phys. Rev. B 54 (1996) 10614
103. Smith J.M., Klipstein P.C., Grey R., and Hill G. Phys. Rev. B. 57 (1998) 1746
104. J.M. Smith P.C. Klipstein R. Grey G. Hill 1998)
105. W.R. Tribe P.C. Klipstein G.W. Smith 1994). In 22nd Int. Conf on the Physics of Semiconductors Lockwood, D. J.), pp. 759-762, World Press
106. Chow D.H., McGill T.C., Sou I.K., Faurie J.P., and Nieh C.W. Appl. Phys. Lett. 52 (1988) 54
107. Soderstrom J.R., Chow D.H., and McGill T.C. J. Appl. Phys. 66 (1989) 5106
108. Soderstrom J.R., Chow D.H., and McGill T.C. IEEE Electron Dev. Lett. 11 (1990) 27
109. Brown E.R., Soderstrom J.R., Parker C.D., Mahoney L.J., Molvar K.M., and McGill T.C. Appl. Phys. Lett. 58 (1991) 2291
110. Sai-Halasz G.A., Tsu R., and Esaki L. Appl. Phys. Lett. 30 (1977) 651
111. D.H. Chow J.R. Soderstrom D.A. Collins D.Z. Ting-Y., E.T. Yu T.C. McGill 1990 SPIE 1283 (Quantum Well and Superlattice Physics III), 2
112. Soderstrom J.R., Chow D.H., and McGill T.C. Appl. Phys. Lett. 55 (1989) 1094
113. Luo L.F., Beresford R., and Wang W.I. Appl. Phys. Lett. 55 (1989) 2023
114. Beresford R., Luo L.F., Logenbach K.F., and Wang W.I. Appl. Phys. Lett. 56 (1990) 551
115. Chow D.H., Yu E.T., Soderstrom J.R., Ting D.Z.-Y., and McGill T.C. J. Appl. Phys. 68 (1990) 3744
116. Beresford R., Luo L.F., Logenbach K.F., and Wang W.I. Appl. Phys. Lett. 56 (1990) 952
117. Logenbach K.F., Luo L.F., and Wang W.L. Appl. Phys. Lett. 57 (1990) 1554
118. Mendez E.E., Nocera J., and Wang W.I. Phys. Rev. B 45 (1992) 3910
119. Collins D.A., Yu E.T., Rajakarunanayake Y., Soderstrom J.R., Ting D.Z.-Y., Chow D.H., and McGill T.C. Appl. Phys. Len. 57 (1990) 683
120. Luo L.F., Beresford R., Logenbach K.F., and Wang W.I. J. Appl. Phys. 68 (1990) 2854
121. Yu E.T., Collins D.A., Ting D.Z.-Y., Chow D.H., and McGill T.C. Appl. Phys. Lett. 57 (1990) 2675
122. Yang L., Wu M.C., Chen J.F., Chen Y.K., Snider G.L., and Cho A.Y. J. Appl. Phys. 68 (1990) 4286
123. Ting D.Z.-Y., Yu E.T., and McGill T.C. Appl. Phys. Lett. 58 (1991) 292
124. Mendez E.E. Surf. Sci. 267 (1992) 370
125. Nogaret A., Maldonado M.A., Carnahan R.E., Martin K.P., Higgins R.J., Aristone F., Maude D.K., Portal J.C., Chen J.F., and Cho A.Y. Phys. Rev. B 47 (1993) 13872
126. Mendez E.E., Ohno H., Esaki L., and Wang W.I. Phys. Rev. B 43 (1991) 5196
127. Mendez E.E., Nocera J., and Wang W.I. Solid State Electronics 37 (1994) 779 1993 Phys. Rev. B 47, 13937
128. van Son P.C., Milliken F.P., Mendez E.E., and Wang W.I. Surf. Sci. 305 (1994) 516
129. Lyapin S.G., Klipstein P.C., Mason N.J., and Walker P.J. Super/offices and Microstructures 15 (1994) 499
130. Klipstein P.C., Lyapin S.G., Trojan I., Mason N.J., Khan-Cheema U.M., Symons D.M., Daly M.S., Lakrimi M., Nicholas R.J., Murgatroyd I.J., Seong T.Y., Booker G.R., Hill G., and Walker P.J. In: Gil B. (Ed). Int. Conf on Semiconductor Heteroepitaxy (1996), World Scientific 512-522
131. U.M. Khan-Cheema P.C. Klipstein N.J. Mason P.J. Walker M.I. Eremets G. Hill 1996). In 23rd Int. Conf on the Physics of Semiconductors Scheffier and Zimmerman.), pp. 2271-2274, World Press
132. Foulon Y., and Priester C. Phys. Rev. B 45 (1992) 6259
133. Hemstreet L.A., Fong C.Y., and Nelson J.S. J. Vac. Sci. Technol. B11 (1993) 1693
134. Dandrea R.G., Duke C.B., and Zunger A. J. Vac. Sci. Technol. B10 (1992) 1744
135. Daly M.S., Symons D.M., Lakrimi M., Nicholas R.J., Mason N.J., and Walker P.J. Surf Sci. 362 (1995) 205
136. Metzler R.A., and Becker W.M. Phys. Rev. B 8 (1973) 5604