HgCdTe/CdZnTe P-I-N high-energy photon detectors

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1286-1292

  Hamilton, W J ^a   Rhiger, D R ^a   Sen, S ^a   Kalisher, M H ^a   Chapman, G R ^a   Mills, R E ^a,b  

^a Santa Barbara Research Center   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

CdZnTe; Gamma ray detector; HgCdTe; X ray detector

Indexed keywords

EID: 0005423266     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02655021     Document Type: Article

References (16)

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13. 2 spectrum was supplied by EG&G Energy Measurements, Goleta, CA.
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16. SBRC is presently fabricating and delivering 48 × 48 and 64 × 64 CdZnTe photoconductor gamma detector arrays, as well as 512 × 512, 640 × 480, and 1024 × 1024 arrays of p-on-n heterodiode detectors of HgCdTe on CdZnTe substrates hybridized to Si chip readout circuits for infrared focal planes.