Effects of compaction on 193 nm lithographic system performance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3709-3713

  Schenker, Richard ^a   Oldham, William ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005362078     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588653     Document Type: Article

References (10)

1. Rothschild, D. J. Ehrlich, and D.C. Shaver, Appl. Phys. Lett. 55, 1276 (1989)
2. R. Schenker, F. Piao, and W. G. Oldham, SPIE 2726 (1996).
3. D M. Williamson, U.S. Patent No. 5,212,593.
4. D M Williamson et al., Proc. SPIE 2726 (1996).
5. For more information on these concepts, see J. W. Goodman, Introduction to Fourier Optics, 2nd ed. (1995); J. W. Goodman, Statistical Optics (1985).
6. For more information on these concepts, see J. W. Goodman, Introduction to Fourier Optics, 2nd ed. (1995); J. W. Goodman, Statistical Optics (1985).
7. V. N. Mahajan, Appl. Opt. 8121 (Dec. 1, 1994).
8. D Lee D Newmark, K. Toh, P. Flanner, and A. R. Neureuther, "Splat v5.0 Users' Guide," Memorandum No. UCB/ERL M95/13, 3/1/95.
9. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association.
10. N Harned, J. McClay, and J. J. Shamaly, IEEE J. Selected Topics Quantum Electron. 1, 837 (1995).