Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2387-2390

  Fukatsu, S ^a   Usami, N ^b   Shiraki, Y ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005351315     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588867     Document Type: Article

References (14)

1. U. Gnutzmann and K. Clausecker, Appl. Phys. 3, 14 (1974).
2. U. Mencziger, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, and E. Kasper, Phys. Rev. B 47, 4099 (1993).
3. J.-P. Noël, N. L. Rowell, D. C. Houghton, and D. D. Perovic, Appl. Phys. Lett. 57, 1037 (1990); J.-P. Noël, N. L. Rowell, D. C. Houghton, A. Wang, and D. D. Perovic, ibid. 61, 690 (1992).
4. J.-P. Noël, N. L. Rowell, D. C. Houghton, and D. D. Perovic, Appl. Phys. Lett. 57, 1037 (1990); J.-P. Noël, N. L. Rowell, D. C. Houghton, A. Wang, and D. D. Perovic, ibid. 61, 690 (1992).
5. M. V. Klein, M. D. Sturge, and E. Cohen, Phys. Rev. B 25, 4331 (1982); K. A. Mäder, L.-W. Wang, and A. Zunger, Phys. Rev. Lett. 74, 2555 (1995).
6. M. V. Klein, M. D. Sturge, and E. Cohen, Phys. Rev. B 25, 4331 (1982); K. A. Mäder, L.-W. Wang, and A. Zunger, Phys. Rev. Lett. 74, 2555 (1995).
7. S. Fukatsu, J. Mater. Sci. Mater. Electron. 6, 341 (1995).
8. S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, J. Cryst. Growth 136, 315 (1994).
9. N. Usami, F. Issiki, D. K. Nayak, Y. Shraki, and S. Fukatsu, Appl. Phys. Lett. 67, 524 (1995).
10. F. Issiki, S. Fukatsu, and Y. Shiraki, Appl. Phys. Lett. 67, 1048 (1995).
11. N. Usami, Y. Shiraki, and S. Fukatsu (unpublished).
12. 2, which rests on the interface rather than the electron or hole well centers.
13. N. F. Mott and E. A. Davis, Electronic Processes in Noncrystalline Materials (Oxford University, New York, 1979).
14. S. Fukatsu, N. Usami, and Y. Shiraki, J. Vac. Sci. Technol. B 11, 485 (1993).