Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2286-2289

  Hsu, Y ^a   Wang, W I ^a   Kuan, T S ^b,c  

^a Department of Earth and Environmental Sciences   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005308213     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588921     Document Type: Article

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