Effects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3663-3667

  Ko, K K ^a,b   Berg, E W ^b   Pang, S W ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005298893     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588746     Document Type: Article

References (16)

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