Numerical calculation of relaxation rates in amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 7, 1999, Pages 4894-4897

  Bickham, S R ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005289426     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.4894     Document Type: Article

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