Electric resistance change mechanism of indium-tin oxide film during deposition of dielectric oxide films by rf magnetron sputtering

Japanese Journal of Applied Physics

Volumn 27, Issue 6R, 1988, Pages 1088-1091

  Matsuoka, Tomizo ^a   Kuwata, Jun ^a   Nishikawa, Masahiro ^a   Fujita, Yosuke ^a   Tohda, Takao ^a   Abe, Atsushi ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

Electroluminescent device; Indium tin oxide film; Oxide ceramic target; Resistance change; Sputtering of dielectric oxide films

Indexed keywords

ELECTRIC MEASUREMENTS--RESISTANCE; SPUTTERING;

DIELECTRIC OXIDE FILMS; ELECTROLUMINESCENT DEVICE; INDIUM-TIN OXIDE FILM; OXIDE CERAMIC TARGET; RESISTANCE CHANGE MECHANISM; RF MAGNETRON SPUTTERING;

FILMS;

EID: 0005283998     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.1088     Document Type: Article

References (5)

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