I-V characteristics of resonant tunneling devices: Difference equation method

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 5037-5045

  Krishnamurthy, Srinivasan ^a,c   Chen, A B ^b   Sher, A ^a  

^a SRI INTERNATIONAL   (United States)

^b AUBURN UNIVERSITY   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005244385     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368751     Document Type: Article

References (28)

1. High Speed Semiconductor Devices, edited by S. M. Sze (Wiley, New York, 1990).
2. Physics of Quantum Electron Devices, edited by F. Capasso (Springer, Berlin, 1990).
3. T. J. Shewchuk, P. C. Chapin, P. D. Coleman, W. Kopp, R. Fischer, and H. Markoc, Appl. Phys. Lett. 46, 508 (1983).
4. J. N. Schulman, H. J. De Los Santos, and D. H. Chow, IEEE Electron Device Lett. 17, 220 (1996).
5. T. Ando and H. Akera, Phys. Rev. B 40, 11619 (1989).
6. E. L. Ivchenko and A. A. Kiselev, Phys. Rev. B 50, 7747 (1994).
7. D. Y. K. Ko and J. C. Inkson, Phys. Rev. B 38, 9945 (1988).
8. J. N. Schulman and Y. C. Chang, Phys. Rev. B 27, 2346 (1983)
9. T. B. Boykin, J. P. A. van der Wagt, and J. S. Harris, Phys. Rev. B 43, 4777 (1991).
10. D. Z.-Y. Ting and J. N. Schulman, Phys. Rev. B 45, 6282 (1992).
11. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, Phys. Rev. B 45, 3583 (1992).
12. J. C. Chiang and Y.-C. Chang, J. Appl. Phys. 73, 2402 (1993).
13. J. C. Chiang, Appl. Phys. Lett. 65, 2821 (1994).
14. R. C. Bowen, W. R. Frensley, G. Klimeck, and R. Lake, Phys. Rev. 52, 2754 (1995).
15. G. Klimeck, R. Lake, R. C. Bowen, W. R. Frensley, and T. S. Moise, Appl. Phys. Lett. 67, 2539 (1995).
16. A.-B. Chen, Y.-M. Lai-Hsu, and W. Chen, Phys. Rev. B 39, 923 (1989).
17. D. N. Talwar and C. S. Ting, Phys. Rev. B 25, 2660 (1982).
18. A. R. Bonnefoi, D. H. Chow, and T. C. McGill, J. Appl. Phys. 62, 3836 (1987).
19. T. Ando, J. Phys. Soc. Jpn. 51, 3893 (1982).
20. H. Ohnishi, T. Inata, S. Muto, N. Yokoyama, and A. Shibatomi, Appl. Phys. Lett. 49, 1248 (1986).
21. A. Dasgupta (unpublished).
22. A. Yacoby, M. Heiblum, H. Shtrikman, V. Umansky, and D. Mahalu, Semicond. Sci. Technol. 9, 907 (1994).
23. A. Yacoby, M. Heiblum, D. Mahalu, and H. Shtrikman. Phys. Rev. Lett. 74, 4047 (1995).
24. The density of states effective mass at P and X obtained from Ref. 17 are 0.21 and 0.38 for GaAs. The corresponding values with our slightly altered parameters are 0.14 and 0.52. Similarly changes for AlAs are made.
25. L. Quacha, M. Willander, H. Brugger, and U. Meiners, J. Appl. Phys. 77, 6026 (1995).
26. A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), p. 233, Chap. 7, and Appendix 7A; Phys. Rev. B 26, 6603 (1982).
27. A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), p. 233, Chap. 7, and Appendix 7A; Phys. Rev. B 26, 6603 (1982).
28. J. R. Chelikowsky and S. Louie, Phys. Rev. B 29, 3470 (1984).