SCOPUS 정보 검색 플랫폼

Volumn 75, Issue 12, 1994, Pages 7949-7953

Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide- semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques

(4) Neudeck, P a Kang, S b Petit, J c Tabib Azar, M d

a NASA GLENN RESEARCH CENTER (United States)

b CASE WESTERN RESERVE UNIVERSITY (United States)

c NASA HEADQUARTERS (United States)

d HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005243925 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.356583 Document Type: Article

Times cited : (39)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.