High-current oxygen ion implanter for SIMOX - for volume production of SOI wafers that enable realization of high-speed, low-power LSIs -

Hitachi Review

Volumn 48, Issue 6, 1999, Pages 349-353

  Yoshikawa, Akira ^a,b   Hashimoto, Isao ^a,c   Mera, Kazuo ^a,c   Tokiguchi, Katsumi ^a,b  

^a Power and Industrial Systems Group   (Japan)

^b JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^c Institute of Electrical Engineers of Japan   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM SHAPE; SEPARATION BY IMPLANTED OXYGEN (SIMOX); WAFER HEATING; WAFER QUALITY;

CONTAMINATION; DOPING (ADDITIVES); HEATING; LSI CIRCUITS; MICROWAVES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THROUGHPUT;

ION IMPLANTATION;

EID: 0005064293     PISSN: 0018277X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (2)

1. 2 Layers Formed by Oxygen Implantation into Silicon," Electron. Lett. 14, 18, 593-594 (1978).
2. K. Tokiguchi, et al., "Advanced Microwave Ion Source for 100 mA-class SIMOX Ion Implantation," Proc. of the 11th Int'l Conf. on Ion Implantation Technology, IIT '96, Austin, TX (1996) 1, 287-290 (1996).