Effect of plasma treatment on the density of defects at an amorphous Si:H-insulator interface

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1371-1377

  Umezu, Ikurou ^a,b   Kuwamura, Takahiro ^a   Kitamura, Kazuaki ^a   Tsuchida, Takatsugu ^a   Maeda, Keiji ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b KONAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005025031     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368249     Document Type: Article

References (27)

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