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Volumn 68, Issue 24, 1996, Pages 3419-3421

Ultrashort lifetime photocarriers in Ge thin films

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[No Author keywords available]

Indexed keywords


EID: 0005018415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115779     Document Type: Article
Times cited : (20)

References (12)
  • 11
    • 0343181754 scopus 로고    scopus 로고
    • D. J. Godbey, S. B. Qadri, M. E. Twigg, and E. D. Richmond, Appl. Phys. Lett. 54, 2449 (1989). This paper demonstrated that Ge films with good crystallinity and surface morphology can be grown on sapphire substrates even when the growth temperature is around 700°C.
    • D. J. Godbey, S. B. Qadri, M. E. Twigg, and E. D. Richmond, Appl. Phys. Lett. 54, 2449 (1989). This paper demonstrated that Ge films with good crystallinity and surface morphology can be grown on sapphire substrates even when the growth temperature is around 700°C.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.