Valence-band maximum in the layered semiconductor: Application of constant-energy contour mapping by photoemission

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 24, 1996, Pages R16152-R16155

  Straub, Th ^a   Fauth, K ^a   Finteis, Th ^a   Hengsberger, M ^a   Claessen, R ^a   Steiner, P ^a   Hufner S ^a   Blaha, P ^b  

^a SAARLAND UNIVERSITY   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004989127     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.R16152     Document Type: Article

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