Ultrathin Si buffer layers to improve the exchange bias between Ni–Fe and FeMn layers

Journal of Applied Physics

Volumn 85, Issue 8, 1999, Pages 4934-4936

  Nakagawa, S ^a   Nishimura, K ^a   Shimizu, Y ^a   Naoe, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004985934     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.370050     Document Type: Conference Paper

References (4)

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3. M.-W. Xiao and Z.-Z. Li, Phys. Rev. B PRBMDO 54, 3322 (1996).
4. O. Kitakami, S. Okamoto, and Y. Shimada, J. Appl. Phys. JAPIAU 79, 6880 (1996).