Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon

Advances in Electronics and Electron Physics

Volumn 82, Issue C, 1991, Pages 197-275

  Jain, Suresh C ^a,b   Mertens, R P ^c   Van Overstraeten, R J ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b SOLID STATE PHYSICS LABORATORY   (India)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004674471     PISSN: 00652539     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0065-2539(08)60913-0     Document Type: Article

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