Model for diffusion and growth of silicon on Si(100) with inequivalent sites in a square lattice

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 12, 1996, Pages 8751-8755

  Iguain, J ^a   Martin H ^a   Aldao, C ^a  

^a UNIVERSIDAD NACIONAL DE MAR DEL PLATA   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004667687     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.8751     Document Type: Article

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