Identification of a cubic phase in epitaxial layers of predominantly hexagonal GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Strauss, U ^a   Tews, H ^a   Riechert, H ^a   Averbeck, R ^a   Schienle, M ^a   Jobst, B ^a   Volm, D ^b   Streibl, T ^b   Meyer, B K ^b   Ruhle W W ^c  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c Max Pianck Inst fur F

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CORRELATION METHODS; ELECTRONIC STRUCTURE; HYDROSTATIC PRESSURE; MERCURY COMPOUNDS; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES;

BANDGAP VARIATIONS; LOCAL DENSITY APPROXIMATION (LDA); PRETRANSITIONAL EFFECTS; WURZITE PHASES;

INDIUM COMPOUNDS;

EID: 0004637408     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300002167     Document Type: Article

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