Rate constants for electron transfer across semiconductor/liquid interfaces: Theory and experiment

Zeitschrift fur Physikalische Chemie

Volumn 212, Issue 2, 1999, Pages 161-172

  Lewis, N S ^a  

^a California Institute of Technology   (United States)

Author keywords

CH3CN contacts; Electrode kinetics; Electron transfer; Methanol contacts; n GaAs; n Si

Indexed keywords

ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS;

ELECTRODE KINETICS; ELECTRON TRANSFER; GAAS;

RATE CONSTANTS;

EID: 0004555256     PISSN: 09429352     EISSN: None     Source Type: Journal    
DOI: 10.1524/zpch.1999.212.part_2.161     Document Type: Article

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