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Volumn 59, Issue 7, 1999, Pages 4634-4637

Band-edge modifications due to photogenerated carriers in single p-type δ-doped gaas layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0004448948     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.4634     Document Type: Article
Times cited : (6)

References (9)
  • 1
    • 85037893711 scopus 로고    scopus 로고
    • E. F. Schubert, in, edited by A. C. Gossard, Semiconductors and Semimetals 40 (Academic, New York, 1994), p. 1
    • E. F. Schubert, in Epitaxial Microstructures, edited by A. C. Gossard, Semiconductors and Semimetals Vol. 40 (Academic, New York, 1994), p. 1.
  • 7
    • 85037917793 scopus 로고    scopus 로고
    • Estimated from Hall measurements on molecular beam epitaxy grown bulk GaAs
    • Estimated from Hall measurements on molecular beam epitaxy grown bulk GaAs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.