Structural properties of cubic GaN epitaxial layers grown on β-SiC

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6322-6328

  Teles, L K ^a   Scolfaro, L M R ^a   Enderlein, R ^a   Leite, J R ^a   Josiek, A ^b   Schikora, D ^c   Lischka, K ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITÉ DE BORDEAUX   (France)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004306422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363710     Document Type: Article

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